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A new type of ferroelectric material - doped HfO2
发布时间: 2018-12-29 13:28 | 【 【打印】【关闭】

Key Laboratory of Inorganic Functional Material and Device, CAS Shanghai Institute of Ceramics, Chinese Academy of Sciences
中国科学院无机功能材料与器件重点实验室


SEMINAR
A new type of ferroelectric material - doped HfO2


Speaker: Yingfen Wei (魏莹芬)
Zernike Institute for Advanced Materials
University of Groningen,Holland


报告时间:2019年1月2日(星期三)13:30
报告地点:F6第2会议室
联系人:曾华荣 研究员
欢迎广大科研人员和研究生参加!


报告简介:
The ferroelectricity recently observed in ultra-thin films of doped-hafnia is robust at the nanoscale, where the other ferroelectrics loose their functionality. Hafnia is also Si-compatible, so this recent discovery represents a breakthrough in the field. However, the origin of this ferroelectricity remains elusive due to the extremely low thickness of the films and the presence of secondary phases, which hamper the characterization. In this work, epitaxial single-phase Hf0.5Zr0.5O2 films have been grown on La0.7Sr0.3MnO3/SrTiO3 substrates, displaying outstanding ferroelectric properties and superb crystallinity. Synchrotron x-ray diffraction and electron microscopy reveal a new polar rhombohedral phase, different from the commonly reported polar orthorhombic phase. Aided by density functional theory, we propose a compelling model for the stabilization of FE phase and provide guidelines to uncover ferroelectricity in other simple oxides1.
[1] Y. Wei et al. Nature Materials 17, 1095 (2018)

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