联系我们  |  网站地图  |  English   |  移动版  |  中国科学院 |ARP
站内搜索:
首页 简介 管理部门 科研部门 支撑部门 研究队伍 科研成果 成果转化 研究生教育 党建与创新文化 科普 信息公开 OA系统
学术活动
“会聚”时代的人工晶体讲...
Energy Research & High I...
弛豫铁电材料高压电效应的...
计算含能材料学面临的挑战
青年创新促进会学术交流会议
面向高比能水系可充电锌-...
东生讲坛第4期-分子材料聚...
Bio-inspired MEMS transd...
表面科学和先进表征技术在...
Polymer Nanocomposite Di...
Inorganic chalcogenide s...
“会聚”时代的人工晶体讲...
Materials Today Publishi...
集成计算中心计算所创新项...
东生讲坛第3期-取向组装诱...
现在位置:首页>新闻动态>学术活动
Thermoelectric Chalcopyrite CuGaTe2 ~ High Pressure Treatment & High-temperature Formation Phases ~
2018-01-19 16:19:46 | 【 【打印】【关闭】

SEMINAR

The State Key Lab of

High Performance Ceramics and Superfine Microstructure

Shanghai Institute of Ceramics, Chinese Academy of Sciences

中 国 科 学 院 上 海 硅 酸 盐 研 究 所 高 性 能 陶 瓷 和 超 微 结 构 国 家 重 点 实 验 室

 

 

Thermoelectric Chalcopyrite CuGaTe2

~ High Pressure Treatment & High-temperature Formation Phases ~

  

Atsuko Kosuga

Graduate School of Science, Osaka Prefecture University, Sakai, Japan

  

时间:20171128日(星期二)10:30

地点:嘉定园区F51)会议室

 

欢迎广大科研人员和研究生参与讨论!

联系人:陈立东4804),史迅(2803

报告摘要:

Topic 1

The effect of room-temperature high-pressure (RTHP) treatment on the transport properties, crystal structure, and electronic structure of CuGaTe2 with chalcopyrite structure were investigated. The thermal conductivity of RTHP-treated CuGaTe2 is greatly reduced, which is attributed to the point defects, stacking faults, and increased grain boundaries from the results of theoretical analysis based on the Callaway model. These defects also decrease the carrier mobility and increase the carrier concentration, resulting in lowering the electrical conductivity and Seebeck coefficient of RTHP-treated CuGaTe2. The crystal structure analysis indicates that RTHP-treated CuGaTe2 contains microstrains, which partially arises from a series of disorder at the Cu-Ga cation site with a variety of degrees and geometries. We predicts, from the calculated formation energy, that such disorder can be induced as a metastable structure evolved by the RTHP-treatment applied in this study. Electronic structure calculations clarifies that the disorder at the Cu-Ga cation site changes orbitals hybridization near the Fermi energy. Specifically Cu 3d orbital and Te 5p orbital approach to the Fermi energy from the conduction band, which contributes to decease in the band gap, resulting in bipolar conduction. This calculation result is consistent with the experimentally observed increase in carrier concentration and decrease in Seebeck coefficient.

Y. Fujii and A. Kosuga et al., Outstanding Poster Award in ICT2016.

Y. Fujii and A. Kosuga et al., in preparation for submission.

 

Topic 2

Polycrystalline CuGaTe2 with a chalcopyrite-type structure consolidated by hot-pressing is a potential candidate as a medium temperature thermoelectric (TE) material. However, its high-temperature formation phases have rarely been reported to date. Here, we investigated the temperature dependent formation phases and crystal structure at 300–800 K of hot-pressed CuGaTe2. From synchrotron X-ray diffraction data and crystal structure analysis of the heating and cooling processes, it was clarified that a certain amount of impurity phases, such as Te and CuTe, precipitated from the CuGaTe2 matrix when the temperature was increased to 500–650 K. This is the temperature range where CuGaTe2 has been reported to show high TE performance. After CuGaTe2 was heated to 800 K, such impurity phases remained, even when cooled to room temperature. They also affected the tetragonal distortion and x-coordinate of Te in the CuGaTe2 matrix, probably due to deficiencies of Cu and Te in the matrix. Our results reveal detailed information on the formation phases of CuGaTe2 at high temperature and, thus, provide insight for evaluation of its high-temperature stability and transport properties.

Y. Fujii and A. Kosuga, Journal of Electronic Materials in press.

 

报告人简介:

Name: Atsuko KOSUGA

Address(Office): Department of Physical Science,

Graduate School of Science,

Osaka Prefecture University,

Gakuencho 1-1, Nanaku,

Sakai, Osaka 599-8531, Japan

Phone& Fax: +81-72-254-9826

E-mail : a-kosuga@p.s.osakafu-u.ac.jp

 

EDUCATION

March 2000 Bachelor of Engineering,

Department of Electronic, Information Systems and Energy Engineering, Graduate School of Engineering, Osaka University, Japan

 

March 2002 Master of Engineering,

Department of Nuclear Engineering, Graduate School of Engineering, Osaka University, Japan

July 2006 Ph. D.in Engineering, Osaka University (Supervisor: Prof. Shinsuke YAMANAKA)

 

WORKINGEXPERIENCE

April 2002-April 2003

Researcher at Murata Manufacturing Co., Ltd.(Japan)

Development of electronic devices

 

May 2003 -March 2006

COE Assistant Professor at Osaka University(Japan)

Project: 21stcentury center of excellence towards creating new industriesbased on inter-nanoscience

Synthesis and physical property investigation of energy related materials (thermoelectric, photocatalyst, and nuclear materials)

 

July 2006 -October 2006

Technical Staff atNational Institute of Advanced Industrial Science and Technology (Japan)

Synthesis and physical property investigation of thermoelectric oxides

Development of thermoelectric oxide modules

 

April 2007 –March 2010

Research Fellow of the Japan Society for the Promotion of Science (JSPS) for Young Scientistsat National Institute of Advanced Industrial Science and Technology (Japan) (Supervisor: Dr. Ryoji FUNAHASHI)

Synthesis and physical property investigation of thermoelectric oxides

Development of thermoelectric oxide modules

 

April 2012-March 2016

Special Lecture (Tenure-track Lecture) at Thermoelectric Group, Nanoscience and Nanotechnology Research Institute,Research Organizationfor the 21stCentury, Osaka Prefecture University(Japan)

Development of high-efficient thermoelectric materials by nanostructure controlDevelopment of eco-friendly ceramic thermoelectric materials

 

April 2016-Present

Tenured Associate Professor at Thermoelectric Group, Department of Physical Science, Graduate School of Science, Osaka Prefecture University (Japan)

Study on crystal structure and transport propertiesof novel thermoelectric materials

Development of thermoelectric materials with new function

 

October2017-Present

PRESTO Researcher, Japan Science and Technology Agency, Japan

Development of thermoelectric materials and modules based on GeSbTe materials

 

AWARD

1. The Best Scientific Paper Award from the International Thermoelectric Society (June 2005)

2. The Best Paper Award from the Thermoelectric Society of Japan (August 2008)

3. The Best Poster Award from the Thermoelectric Society of Japan (August 2012)

4. The Award for Encouragement of Research in IUMRS-ICA2014 from IUMRS-ICA (October 2014)

5. The ITS Outstanding Poster Award from the International Thermoelectric Society (June 2016)

6. The Best Poster Award from the Thermoelectric Society of Japan (September 2016)

7. The Best Poster Award from the Japan Institute of Metals and Materials (September, 2016)

版权所有 中国科学院上海硅酸盐研究所 沪ICP备05005480号-1
长宁园区地址:上海市长宁区定西路1295号 电话:86-21-52412990 传真:86-21-52413903 邮编:200050
嘉定园区地址:上海市嘉定区和硕路585号  电话:86-21-69906002 传真:86-21-69906700 邮编:201899