Mechanism of Doping limit in extremely heavily doped semiconductors: Sn-doped In₂O₃ 

　　Prof. Chul Hong Park 

　　Department of Physics Education 

　　Pusan National University 

　　Gumjung, Pusan 46241, Korea 

　　时间：2017年3月2日（星期四）下午14:00 

　　　　地点： 4 号楼 14楼第二会议室 

　　联系人：郑嘹赢  研究员 

　　       李国荣　研究员  

欢迎各位老师同学光临! 

Abstract:

The microscopic structure of the extremely heavily Sn-doped In₂O₃ are investigated through the first-principles total energy calculations. The evolution of the doping efficiency around the doping limit is investigated. 

It is shown that the optimal dopant concentration is determined by the interaction between the defect and compensating defects. The formation energies of compensating defects are shown to be significantly reduced by the interactions with the dopants. The effect of the interaction is proportional to the dopant concentration. Thus as the concentration of impurity exceeds 1021 cm^-3, the formations of defects are enhanced, and thus surprisingly the concentration of the free electron carrier is found to be lowered, even if the concentration of dopant increases.