The Key Lab of Inorganic Functional Materials and Devices
Shanghai Institute of Ceramics, Chinese Academy of Sciences 
中 国 科 学 院 上 海 硅 酸 盐 研 究 所 无 机 功 能 材 料 与 器 件 重 点 实 验 室 特 邀 学 术 报 告
报告题目： Integrated Magnetics and Multiferroics for Compact and Power Efficient Sensing, Memory, Power, RF and Microwave Electronics

　　报 告 人：Nian-xiang Sun

　　报告时间：2014年8月21日（星期四）上午9:30

　　报告地点：4号楼14楼第二会议室

联系人：罗豪甦

　　Electrical and Computer Engineering Department, Northeastern University, Boston, MA, USA

　　Web: www.neu.edu/sunlab; Phone: +1 (617) 373-3351 Email: nian@ece.neu.edu

　　The coexistence of electric polarization and magnetization in multiferroic materials provides great opportunities for realizing magnetoelectric coupling, including electric field control of magnetism, or vice versa, through a strain mediated magnetoelectric interaction effect in layered magnetic/ferroelectric multiferroicheterostructures [1-7]. Strong magnetoelectric coupling has been the enabling factor for different multiferroic devices, which however has been elusive, particularly at RF/microwave frequencies.In this presentation, I will cover the most recent progress on new integrated GHz magnetic inductors based on solenoid structures with FeGaB/Al2O3and FeCoB/Al2O3multilayer films, which show significantly enhanced inductance and quality factor at GHz frequencies over their air core counterparts. These inductors show excellent high-frequency performance with a wide operation frequency range of 0.5-2.5GHz, in which the inductance is flat and the inductance of the magnetic inductor shows >150% enhancement compared with that of the same size air core inductor and enhanced quality factor of close to 20. By putting these inductors on a piezoelectric slaband applying DC voltage, power efficient voltage tunable inductors with inductancetunability of 50%~150% are achieved. These novel voltage tunable GHz inductors show great promise for applications in radio frequency integrated circuits.At the same time, we will demonstrateother voltage tunablemultiferroic devices, including ultra-sensitive nanoelectromechanical systems magnetoelectric sensors with picoTesla sensitivity [5], multiferroicvoltage tunable bandpass filters[6], tunable bandstop filters, tunable phase shifters and spintronics, etc.

　　1. N.X. Sun and G. Srinivasan, SPIN, 02, 1240004 (2012); 2. J. Lou, et al., Advanced Materials, 21, 4711 (2009); 3. . J. Lou, et al. Appl. Phys. Lett. 94, 112508 (2009) 4; M. Liu, et al. Advanced Functional Materials, 21, 2593 (2011); 5. T. Nan, et al. Scientific Reports, 3, 1985 (2013); 6. M. Liu, et al. Advanced Materials, 25, 1435 (2013); 7M. Liu, et al. Advanced Functional Materials, 19, 1826 (2009).

　　Short Bio: Nian Sun is a professor at the Electrical and Computer Engineering Department, Northeastern University. He received his Ph.D. degree from Stanford University. Prior to joining Northeastern University, he was a Scientist at IBM and Hitachi Global Storage Technologies. Dr. Sun was the recipient of the NSF CAREER Award, ONR Young Investigator Award, the S?renBuus Outstanding Research Award, etc. His research interests include novel magnetic, ferroelectric and multiferroic materials, devices and subsystems. He has over 150 publications and over 20 patents and patent disclosures. One of his papers was selected as the “ten most outstanding full papers in the past decade (2001~2010) in Advanced Functional Materials”. Dr. Sun has given over 80 invited or keynote presentations in national and international conferences and universities. He is an editor of IEEE Transactions on Magnetics, and a fellow of the Institute of Physics, and of the Institution of Engineering and Technology.

　　欢迎广大科研人员和研究生参与讨论！