Atomic and electronic structures of p-type dopants in 4H-SiC--中国科学院上海硅酸盐研究所

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论文题目:

Atomic and electronic structures of p-type dopants in 4H-SiC

作者:

Lu, Lingyan; Zhang, Han; Wu, Xiaowei; Shi, Jing; Sun, Yi-Yang

刊物名称:

CHINESE PHYSICS B

发表年度:

2021

卷:

30

期:

9

页码: