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论文题目:
Design principle for a p-type oxide gate layer on AlGaN/GaN toward normally-off HEMTs: Li-doped NiO as a model
作者:
Li, Guanjie; Li, Xiaomin; Zhao, Junliang; Yan, Fawang; Zhu, Qiuxiang; Gao, Xiangdong
刊物名称:
JOURNAL OF MATERIALS CHEMISTRY C
发表年度:
2020
卷:
期:
页码:
