铁电薄膜

Ferroelectric thin films 

　　铁电薄膜具有良好的铁电性、压电性、介电性、热释电性、电光及非线性光学等特性，可用于制作铁电存储器、微电子机械系统（MEMS）、非制冷红外探测器、微波调谐器件等。多铁性材料和磁电复合薄膜是当前的研究热点。  

　　Ferroelectric thin films with superior ferroelectric, piezoelectric, dielectric, pyroelectric, electro-optic and nonlinear optic properties may be applied to ferroelectric memory, micro-electro-mechanical system（MEMS）, uncooled infrared detector, microwave tunable device etc.. Multiferroic materials and magnetoelectric composite thin films are hot topics for current research.  

　　主要研究内容包括:    

　　Research interests:  

　　(1) 薄膜材料组成设计与性能优化 

　　Composition design and the properties improvement of thin films;  

　　(2) 氧化物电极取向生长及性能 

　　Growth and properties of oriented oxide electrode films  

　　(3) 铁电压电（无铅）薄膜生长、结构与性能调控； 

　　Growth, structure and properties control of ferroelectric -piezoelectric (lead free) thin film  

　　(4) 磁电复合薄膜生长、界面、磁电性能及物理机制。 

　　Growth, interface, magnetoelectric properties and physical mechanism of magnetoelectric composite thin films  

　　代表性论文及专利:  

　　Representative papers and patents:  

1. H. H. Cai, S. G. Yan, M. X. Zhou, N. T. Liu, J. M. Ye, S. Li, F. Cao, X. L. Dong and G. S. Wang*, Significantly improved energy storage properties and cycling stability in La-doped PbZrO₃ antiferroelectric thin films by chemical pressure tailoring, Journal of the European Ceramic Society, 39, 4761–4769 (2019). 
2. J. Y. Lian, F. Ponchel, N. Tiercelin, L. Y. Han, Ying Chen*, D. Remiens, T. Lasri, G. S. Wang, P. Pernod, W. B. Zhang and X. L. Dong*, Influence of the magnetic state on the voltage-controlled magnetoelectric effect in a multiferroic artificial heterostructure YIG/PMN-PZT, Journal of Applied Physics, 126, 064101(2018). 
3. Zhao Bo, Chen Ying*,Xue Fen, Guo Xin, Wang Genshui, YangLihui, Wang Wensheng, DongXianlin*, Magnetic and electric properties of wrinkled manganite films derived by sol-gel method, Journal of the American Ceramic Society, 100, 2392-2396 (2017). 
4. Kui Li, Xianlin Dong, Denis Rémiens, Tao Li, Ying Chen, and Genshui Wang*, Effect of polarization switching cycles on the dielectric response and Rayleigh constant in Pb_0.4Sr_0.6TiO₃ thin films, Journal of Applied Physics, 115, 064102 (2014).  
5. Tao Li, Genshui Wang, Gang Du, Kui Li, Ying Chen, Zhiyong Zhou, Fei Cao, and Xianlin Dong*, Temperature scaling behavior of dynamic hysteresis for (K,Na)NbO₃ lead-free ferroelectric films, Journal of Applied Physics, 113, 214103 (2013).  
6. Jun Ge, Denis Remiens, Jean Costecalde, Ying Chen, Xianlin Dong, and Genshui Wang*, Effect of residual stress on energy storage property in PbZrO₃ antiferroelectric thin films with different orientations, Applied Physics Letters,  103,162903 (2013).  
7. Ying Chen, Genshui Wang, Shuai Zhang, Xiuyun Lei, Junyu Zhu, Xiaodong Tang, Yongling Wang and Xianlin Dong*, Magnetocapacitance effects of Pb_0.7Sr_0.3TiO₃/ La_0.7Sr_0.3MnO₃ thin film on Si substrate, Applied Physics Letters,  98, 052910(2011). 
8. 陈莹，董显林，王根水，张帅，一种镧锶锰氧/钛酸锶铅异质复合薄膜及其制备方法，中国发明专利，授权专利号：ZL201010613934.4。 
9. 董显林，李涛，王根水，陈莹，低温下制备具有高度(001)择优取向的钌酸锶薄膜的方法，中国发明专利，授权专利号：ZL201310407759.7。 
10. 董显林，郭新，陈莹，王根水，一种新型磁电调谐复合薄膜及其制备方法，中国发明专利，授权专利号：ZL 201611245440.9。 
11. 董显林，肖玲，陈莹，王根水，刘振，一种磁电复合薄膜及其制备方法，中国发明专利，授权专利号：ZL 201510654518.1。 
12. 董显林，薛粉，陈莹，王根水，一种镧钙锰氧-镧锶锰氧-钛酸锶铅复合薄膜及其制备方法，中国发明专利，授权专利号：ZL 201610006430.3。 
13. 董显林，薛粉，陈莹，王根水，一种调控镧钙锰氧薄膜磁性能的方法，中国发明专利，授权专利号：ZL 201510736240.2。 
14. 董显林，连建芸，陈莹，王根水，钇铁石榴石薄膜材料及其制备方法，中国发明专利，授权专利号：ZL 201510653931.6。